石墨-半導體應用
第三代半導體材料是以碳化矽（SiC）及氮化鎵（GaN）為材料主流。具備高功率、耐高溫、高崩潰電壓、高電流密度及高頻等特性，更能因應電動車、綠能、5G基站、雷達及快充等發展趨勢，其中以SiC-on-SiC、GaN-on-SiC、GaN-on-Si最具發展性。
| Proerty | values | R-6340 | R-6500 | R-6510 | R-6650 | - |
| Density | g/cm3 | 1.72 | 1.77 | 1.83 | 1.84 | - |
| Porosity(Open) | % | 15 | 14 | 10 | 10 | - |
| Grain Size |
μm |
15 | 10 | 10 | 7 | - |
| Hradness Rockwell B 5/100 |
HRB |
80 | 70 | 90 | 95 | - |
| Young's mouldus | Mpa | 11000 | 10500 | 11500 | 12500 | - |
| Flexural Strength |
Mpa |
40 | 45 | 60 | 65 | - |
| Compressive Strength |
Mpa |
85 | 90 | 130 | 150 | - |
|
Specific electrical resistance |
µΩm | 16 | 12 | 13 | 14 | - |
| Thermal expension | x10-6K-1 | 3.2 | 4.2 | 4.2 | 4.1 | - |
|
Thermal conductivity |
Wm-1K-1 | 105 | 90 | 105 | 95 | - |
|
Ash Value |
ppm | 100 | 100 | 100 | 100 | - |
